VRF2933MP datasheet(2/14 Pages) MICROCHIP

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Device Specifications

This section shows the specifications of the VRF2933(MP) device.

1.1

Absolute Maximum Ratings

The following table shows the absolute maximum ratings of the VRF2933(MP) device. TC = 25 °C unless otherwise

specified.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Ratings

Unit

VDSS

Drain source voltage

170

Continuous drain current

VGS

Gate-source voltage

±40

Total power dissipation

648

TSTG

Storage temperature range

–65 to 150

°C

Operating junction temperature

200

1.2

Electrical Performance

The following table shows the static characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise

specified.

Table 1-2. Static Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

V(BR)DSS Drain-source breakdown voltage

VGS = 0 V, ID = 100 mA

170

180

VDS(ON)

On-state drain voltage

ID(ON) = 20 A, VGS = 10 V

2.1

2.4

IDSS

Zero gate voltage drain current

VDS = 100 V, VGS = 0 V

2.0

IGSS

Gate-source leakage current

VDS = ±20 V, VDS = 0 V

2.0

µA

gfs

Forward transconductance

VDS = 10 V, ID = 20 A

mhos

VGS(th)

Gate-source threshold voltage

VDS = 10 V, ID = 100 mA

2.9

3.6

4.4

The following table shows the thermal characteristics of the VRF2933(MP) device.

Table 1-3. Thermal Characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

RθJC

Junction-to-case thermal resistance

0.27

°C/W

Note: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed.

The following table shows the dynamic characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise

specified.

VRF2933, VRF2933MP

Device Specifications

and its subsidiaries

Datasheet

DS00004434A-page 2

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