PI3USB4002AQ datasheet(4/9 Pages) DIODES

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PI3USB4002AQ

A Product Line of

Diodes Incorporated

www.diodes.com

January 2021

Diodes Incorporated

PI3USB4002AQ

Document Number DS41995 Rev 1-2

Storage Temperature ..........................................................–65°C to +150°C

Supply Voltage (VDD) to Ground Potential .........................–0.3V to +6V

Channel Input/Output Voltage (L0+/-) .................................–0.3V to +6V

Channel Input/Output Voltage (C0+/-) ...............................–0.3V to +24V

Reference Pin Voltage (REF) to Ground Potential..............–0.3V to +24V

Control Pins Input Voltage (EN).............................................–0.3V to +6V

ESD (All Pins).............................................2KV (HBM) and 1KV (CDM)

Channel Input/Output Current (L0/C0)...........................................±25mA

Note:

Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

Maximum Ratings

(Above which useful life may be impaired. For user guidelines, not tested.)

Recommended Operating Conditions

Symbol

Description

Test Conditions

Min.

Typ. Max. Units

VDD

Power Supply

2.7

3.3

5.5

VI/O

Analog Voltage Range

5.5

Voltage Range for Control Pins

5.5

IDD

Current Consumption in Normal Operation VDD =3.3V, VIO =0V, EN= Low

µA

IDDQ

Chip Disabled Current Consumption

VDD =3.3V, VIO =0V, EN= High

µA

Operating Temperature Range

-40

125

DC Electrical Characteristics for Switching over Operating Range

(TA = -40°C to 125°C, Typical values are at VDD = 3.3V, TA = 25°C, EN=0V, REF=NC (unless otherwise noted))

Parameter

Description

Test Conditions

Min.

Typ. Max. Units

Control Pins – EN

VIH - cntrl signals Input HIGH Voltage for EN

VDD = 2.7-5.5V

1.2

VIL - cntrl signals Input LOW Voltage for EN

VDD = 2.7-5.5V

0.6

IIH

Input HIGH Current for EN

VI = 5.5V

-1

µA

IIL

Input LOW Current for EN

VI = 0V

-1

µA

High Speed IO – L0/C0

VOVP

CO± OVP trigger voltage

4.6

4.75

5.0

Ron

ON resistance

VI/O = 0V, 0.4V, Ion = –8mA

Ω

Δ Ron

On resistance between + and – channel VI/O = 0V, 0.4V, Ion = –8mA

0.5

Ω

Ron_Flat

ON resistance flatness

VI/O = 0V, 0.4V, Ion = –8mA

0.2

0.5

Ω

Ioff

CO± Power-off leakage

VDD = 0V, VCO+/- = 0 – 3.6V

-1

µA

IOC

Channel off leakage current

EN = VDD = 3.3V, VI/O = 0 –

3.6V

-1

µA

ION

Channel on leakage current

EN = 0V, VDD = 3.3V, VI/O =

0 – 3.6V

-1

µA

IOVP

Leakage current on C0+/C0- in OVP

mode

EN = 0V, VDD = 3.3V, VC0+ or

VC0- = 20V

ZON_GND

On state impedance to GND

EN = 0V, VDD = 3.3V, VI/O =

0 – 3.6V

3.5

MΩ

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