TLMS310 datasheet(2/6 Pages) VISHAY

2 / 6 page

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Document Number 83170

Rev. 1.5, 24-Sep-07

Vishay Semiconductors

TLMS310.

Note:

1) T

amb = 25 °C, unless otherwise specified

Note:

1) T

amb = 25 °C, unless otherwise specified

2) in one packing unit I

Vmax/IVmin ≤ 1.6

TYPICAL CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

ABSOLUTE MAXIMUM RATINGS1) TLMS310.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

DC Forward current

Tamb ≤ 60 °C

Surge forward current

tp ≤ 10 μsIFSM

0.5

Power dissipation

Tamb ≤ 60 °C

100

Junction temperature

100

°C

Operating temperature range

Tamb

- 40 to + 100

°C

Storage temperature range

Tstg

- 40 to + 100

°C

Soldering temperature

≤ 5 s

Tsd

260

°C

Thermal resistance junction/

ambient

mounted on PC board

(pad size > 16 mm2)

RthJA

400

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMS310., RED

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN

TYP.

MAX

UNIT

Luminous intensity 2)

IF = 10 mA

TLMS3100

2.5

7.5

TLMS3101

412.5

mcd

Dominant wavelength

IF = 10 mA

624

636

Peak wavelength

IF = 10 mA

640

Angle of half intensity

IF = 10 mA

± 60

deg

Forward voltage

IF = 20 mA

2.0

2.6

Reverse voltage

IR = 10 μAVR

Junction capacitance

VR = 0, f = 1 MHz

7.0

Temperature coefficient of VF

IF = 20 mA

TCVF

- 1.8

mV/K

Temperature coefficient of

IF = 10 mA

0.05

nm/K

Figure 1. Power Dissipation vs. Ambient Temperature

100

125

Tamb - Ambient Temperature (°C)

95 10904

Figure 2. Forward Current vs. Ambient Temperature for InGaN

95 10905

amb - Ambient Temperature (°C)

100

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