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US1ML-SMA-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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US1ML-SMA-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() US1M Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R601-224.a ABSOLUTE MAXIMUM RATINGS Ratings at 25°C ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%. PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRRM 1000 V RMS Voltage VRMS 700 V DC Blocking Voltage VDC 1000 V Average Forward Rectified Current at TL=55°C I(AV) 1.0 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 30.0 A Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 3) θJA 50 °C/W ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Instantaneous Forward Voltage VF IF=1.0A 1.7 V DC Reverse Current at Rated DC Blocking Voltage IR TA=25°C 5.0 μA TA=100°C 50.0 μA Reverse Recovery Time (Note 1) trr 75 ns Junction Capacitance (Note 2) CJ 15.0 pF Notes: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A. 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3. P.C.B. mounted with 0.2x0.2” (5.0x5.0mm) copper pad areas. |
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