SIRC18DP datasheet(5/9 Pages) VISHAY

tên linh kiện	SIRC18DP

Giải thích chi tiết về linh kiện	N-Channel 30 V (D-S) MOSFET With Schottky Diode

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SiRC18DP

www.vishay.com

Vishay Siliconix

S21-0843-Rev. D, 09-Aug-2021

Document Number: 76402

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Current Derating a

Power, Junction-to-Case

Power, Junction-to-Ambient

Note

a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

100

1000

10000

120

160

200

100

125

150

Axis Title

C - Case Temperature (°C)

2nd line

Package Limited

100

1000

10000

255075

100

125

150

Axis Title

C - Case Temperature (°C)

2nd line

100

1000

10000

0.5

1.0

1.5

2.0

2.5

100

125

150

Axis Title

A - Ambient Temperature (°C)

2nd line

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