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NTMTS0D4N04CL bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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NTMTS0D4N04CL bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() NTMTS0D4N04CL www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C 8.86 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 32 V TJ = 25°C 10 mA TJ = 125°C 250 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ ID = 250 mA, ref to 25°C −6.24 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 0.3 0.4 mW VGS = 4.5 V ID = 50 A 0.45 0.64 Forward Transconductance gFS VDS =5 V, ID = 50 A 330 S Gate Resistance RG TA = 25°C 1.0 W CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 20 V 20600 pF Output Capacitance COSS 9500 Reverse Transfer Capacitance CRSS 390 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 20 V; ID = 50 A 163 nC Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 20 V; ID = 50 A 29.8 nC Gate−to−Source Charge QGS 51 Gate−to−Drain Charge QGD 52.1 Total Gate Charge QG(TOT) 341 Voltage Plateau VGP 2.7 V SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time td(ON) VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 6 W 110 ns Rise Time tr 147 Turn−Off Delay Time td(OFF) 217 Fall Time tf 107 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 6 W 45.6 ns Rise Time tr 39.8 Turn−Off Delay Time td(OFF) 382 Fall Time tf 96.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.75 1.2 V TJ = 125°C 0.58 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A 117 ns Charge Time ta 87 Discharge Time tb 30 Reverse Recovery Charge QRR 336 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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