STPS2170_V01 datasheet(3/12 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

δ = 0.05

δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

PF(AV)(W)

IF(AV)(A)

360°

δ= tp/T

Figure 2. Average forward current versus ambient

temperature (δ = 0.5, SMA Flat, SMA Flat Notch)

100

125

150

175

Tamb(°C)

360°

IF(AV)(A)

δ= tp/T

SMA Flat / SMA Flat Notch

th(j-a)

= R

th(j-l)

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 4. Relative variation of thermal impedance junction

to lead versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Zth(j-l)/Rth(j-l)

360°

tP(s)

Single pulse

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

120

140

160

180

360°

VR(V)

= 150 °C

= 125 °C

= 100 °C

= 75 °C

= 50 °C

= 25 °C

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

100

1000

100

1000

C(pF)

VR(V)

360°

F = 1 MHz

VOSC = 30 mVRMS

= 25 °C

STPS2170

Characteristics (curves)

DS10644 - Rev 2

page 3/12

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