IRF730ASTRLPBFA datasheet(1/10 Pages) VISHAY

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IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

www.vishay.com

Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

1

Document Number: 91046

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Low gate charge Qg results in simple drive

requirement

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully

characterized

capacitance

and

avalanche voltage and current

• Effective Coss specified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Single transistor flyback Xfmr. reset

• Single transistor forward Xfmr. reset (both US line input

only)

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting TJ = 25 °C, L = 19 mH, Rg = 25

Ω, IAS = 5.5 A (see fig. 12)

c. ISD

≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

d. 1.6 mm from case

e. Uses IRF730A, SiHF730A data and test conditions

PRODUCT SUMMARY

VDS (V)

400

RDS(on) max. (

Ω)VGS = 10 V

1.0

Qg max. (nC)

22

Qgs (nC)

5.8

Qgd (nC)

9.3

Configuration

Single

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

Available

ORDERING INFORMATION

Package

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and halogen-free

SiHF730AS-GE3

SiHF730ASTRL-GE3 a

SiHF730ASTRR-GE3 a

SiHF730AL-GE3

Lead (Pb)-free

IRF730ASPbF

IRF730ASTRLPbF a

--

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

400

V

Gate-source voltage

VGS

± 30

Continuous drain current

VGS at 10 V

TC = 25 °C

ID

5.5

A

TC = 100 °C

3.5

Pulsed drain current a, e

IDM

22

Linear derating factor

0.6

W/°C

Single pulse avalanche energy b, e

EAS

290

mJ

Avalanche current a

IAR

5.5

A

Repetiitive avalanche energy a

EAR

7.4

mJ

Maximum power dissipation

TC = 25 °C

PD

74

W

Peak diode recovery dV/dt c, e

dV/dt

4.6

V/ns

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) d

for 10 s

300

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