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ARF476FL bảng dữ liệu(PDF) 2 Page - Microchip Technology

tên linh kiện ARF476FL
Giải thích chi tiết về linh kiện  500 V, 900 W, 128 MHz RF Power MOSFET
PDF  14 Pages
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nhà sản xuất  MICROCHIP [Microchip Technology]
Trang chủ  http://www.microchip.com
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ARF476FL bảng dữ liệu(HTML) 2 Page - Microchip Technology

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1.
Device Specifications
This section shows the specifications of the ARF476FL device.
1.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the ARF476FL device. TC = 25 °C unless otherwise
specified.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
VDSS
Drain-source voltage
500
V
VDGO
Drain-gate voltage
500
ID
Continuous drain current
10
A
VGS
Gate-source voltage
±30
V
PD
Total power dissipation (per side)
910
W
TJ, TSTG
Operating and storage junction temperature range
–55 to 175
°C
TL
Lead temperature: 0.063" from case for 10 seconds
300
1.2
Electrical Performance
The following table shows the static characteristics of the ARF476FL device. TC = 25 °C unless otherwise specified.
Table 1-2. Static Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
V(BR)DSS Drain-source breakdown voltage
VGS = 0 V, ID = 250 µA
500
V
VDS(ON)
On-state drain voltage1
ID(ON) = 5 A, VGS = 10 V
2.9
4
IDSS
Zero-gate voltage drain current
VDS = VDSS, VGS = 0 V
100
µA
VDS = 50 V, VGS = 0 V, TC =
125 °C
500
IGSS
Gate-source leakage current
VGS = ±30 V, VDS = 0 V
±100
nA
gfs
Forward transconductance
VDS = 15 V, ID = 5 A
4.2
5.1
S
gfs1/gfs2
Forward transconductance match
ratio
VDS = 15 V, ID = 5 A
0.9
1.1
S
VGS(th)
Gate-source threshold voltage
VDS = VGS, ID = 200 mA
2
3.3
4
V
DVGS(th) Gate threshold voltage match
VDS = VGS, ID = 200 mA
0.2
V
Note: 
1.
Pulse test: Pulse width < 380 μs, Duty Cycle < 2%.
The following table shows the thermal characteristics of the ARF476FL device.
ARF476FL
Device Specifications
© 2022 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004436A-page 2



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