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ARF476FL bảng dữ liệu(PDF) 2 Page - Microchip Technology |
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ARF476FL bảng dữ liệu(HTML) 2 Page - Microchip Technology |
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2 / 14 page ![]() 1. Device Specifications This section shows the specifications of the ARF476FL device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the ARF476FL device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain-source voltage 500 V VDGO Drain-gate voltage 500 ID Continuous drain current 10 A VGS Gate-source voltage ±30 V PD Total power dissipation (per side) 910 W TJ, TSTG Operating and storage junction temperature range –55 to 175 °C TL Lead temperature: 0.063" from case for 10 seconds 300 1.2 Electrical Performance The following table shows the static characteristics of the ARF476FL device. TC = 25 °C unless otherwise specified. Table 1-2. Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 500 V VDS(ON) On-state drain voltage1 ID(ON) = 5 A, VGS = 10 V 2.9 4 IDSS Zero-gate voltage drain current VDS = VDSS, VGS = 0 V 100 µA VDS = 50 V, VGS = 0 V, TC = 125 °C 500 IGSS Gate-source leakage current VGS = ±30 V, VDS = 0 V ±100 nA gfs Forward transconductance VDS = 15 V, ID = 5 A 4.2 5.1 S gfs1/gfs2 Forward transconductance match ratio VDS = 15 V, ID = 5 A 0.9 1.1 S VGS(th) Gate-source threshold voltage VDS = VGS, ID = 200 mA 2 3.3 4 V DVGS(th) Gate threshold voltage match VDS = VGS, ID = 200 mA 0.2 V Note: 1. Pulse test: Pulse width < 380 μs, Duty Cycle < 2%. The following table shows the thermal characteristics of the ARF476FL device. ARF476FL Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 2 |
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