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STM32WLE4JC bảng dữ liệu(PDF) 105 Page - STMicroelectronics |
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STM32WLE4JC bảng dữ liệu(HTML) 105 Page - STMicroelectronics |
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105 / 146 page ![]() DS13105 Rev 9 105/146 STM32WLE5/E4xx Electrical characteristics 133 5.3.13 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling two LEDs through I/O ports). the device is stressed by the following electromagnetic events until a failure occurs (failure indicated by the LEDs): • ESD (electrostatic discharge, positive and negative) applied to all device pins until a functional disturbance occurs (test compliant with IEC 61000-4-2 standard) • FTB (burst of fast transient voltage, positive and negative) applied to VDD and VSS pins, through a 100 pF capacitor, until a functional disturbance occurs (test compliant with IEC 61000-4-4 standard) A device reset allows normal operations to be resumed. The test results given in the table below, are based on the EMS levels and classes defined in application note EMC design guide for STM8, STM32 and Legacy MCUs (AN1709). IDD Average consumption from VDD Write mode 3.4 - mA Erase mode 3.4 - Maximum current (peak) Write mode 7 (for 6 µs) - Erase mode 7 (for 67 µs) - 1. Guaranteed by design. Table 65. Flash memory characteristics(1) (continued) Symbol Parameter Conditions Typ Max Unit Table 66. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) Unit NEND Endurance TA = -40 to +105 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 30 Years 1 kcycle(2) at TA = 105 °C 15 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 10 kcycles(2) at TA = 105 °C 10 1. Guaranteed by characterization results. 2. Cycling performed over the whole temperature range. |
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