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STM32WLE4JC bảng dữ liệu(PDF) 88 Page - STMicroelectronics

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Table 48. Current consumption in Standby mode
Symbol
Parameter
Conditions
Typ
Max(1)
Unit
-
VDD
(V)
0 °C
25 °C
55 °C
85 °C
105 °C
0 °C
25 °C
85 °C
105 °C
IDD
(Standby)
Supply current in
Standby mode
RTC disabled
Backup registers
retained
No retention
1.8
0.009
0.027
0.245
1.00
2.40
-
-
-
-
µA
2.4
0.022
0.051
0.340
1.35
2.85
-
-
-
-
3.0
0.046
0.071
0.470
1.75
3.40
-
-
-
-
3.6
0.075
0.125
0.650
2.30
4.05
-
-
-
-
SRAM2 retained
1.8
0.130
0.205
0.820
2.90
5.55
0.200
0.550
8.20
24.0
2.4
0.140
0.225
0.915
3.25
6.05
-
-
-
-
3.0
0.165
0.255
1.05
3.70
6.60
0.280
0.710
9.40
27.0
3.6
0.190
0.300
1.20
4.25
7.25
0.330
0.770
10.0
28.0
IDD
(Standby
with RTC)
Supply current in
Standby mode
(backup registers
and SRAM2
retained)
RTC enabled
RTC clocked by LSI
(PREDIV = 1)
1.8
0.215
0.295
0.895
3.10
5.30
-
-
-
-
2.4
0.230
0.325
0.990
3.45
5.95
-
-
-
-
3.0
0.260
0.360
1.15
3.95
6.85
-
-
-
-
3.6
0.305
0.425
1.30
4.55
7.85
-
-
-
-
RTC clocked by LSE
quartz(2) in low drive
mode
1.8
0.270
0.350
0.975
3.15
5.80
-
-
-
-
2.4
0.295
0.390
1.10
3.50
6.25
-
-
-
-
3.0
0.345
0.445
1.25
4.00
6.85
-
-
-
-
3.6
0.415
0.535
1.45
4.60
7.55
-
-
-
-
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
Table 49. Current consumption during wakeup from Standby mode
Symbol
Conditions
Typ at 25 °C
Unit
VDD = 1.8 V
VDD = 2.4 V
VDD = 3.0 V
VDD = 3.6 V
IDD (wakeup from Standby)
Wakeup clock: MSI 4 MHz
23.5
81.3
111
114
nAs
Wakeup clock: MSI 8 MHz
15.2
15.7
17.3
19.6



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