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STM32F730V8 bảng dữ liệu(PDF) 145 Page - STMicroelectronics |
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STM32F730V8 bảng dữ liệu(HTML) 145 Page - STMicroelectronics |
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145 / 202 page ![]() DS12536 Rev 2 145/202 STM32F730x8 Electrical characteristics 185 6.3.25 Temperature sensor characteristics 6.3.26 VBAT monitoring characteristics 6.3.27 Reference voltage The parameters given in Table 76 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. Table 73. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) VSENSE linearity with temperature - ±1 ±2°C Avg_Slope(1) Average slope - 2.5 - mV/°C V25(1) Voltage at 25 °C - 0.76 - V tSTART(2) Startup time - 6 10 µs TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs 1. Guaranteed by characterization results. 2. Guaranteed by design. Table 74. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FF0 7A2C - 0x1FF0 7A2D TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FF0 7A2E - 0x1FF0 7A2F Table 75. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 4 - - Er(1) Error on Q –1 - +1 % TS_vbat(2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 76. internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint(1) ADC sampling time when reading the internal reference voltage -10 - - µs VRERINT_s(2) Internal reference voltage spread over the temperature range VDD = 3V ± 10mV - 3 5 mV |
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