QPA2225DEVBA datasheet(2/23 Pages) QORVO

2 / 23 page

QPA2225D

28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Data Sheet Rev. B, May 2021 | Subject to change without notice

2 of 23

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Recommended Operating Conditions

Parameter

Min

Typ.

Max

Units

Drain Voltage (VD)

+20

Drain Current, (IDQ)

Drain Current, RF (ID_Drive)

See chart page 6

Gate Voltage Range (VG)

−2 to -2.9

Gate Current, RF (IG_Drive)

See chart page 6

TBASE Range

−40

+85

ºC

Electrical

specifications

are

measured

specified

test

conditions.

Specifications are not guaranteed over all

recommended operating conditions.

Absolute Maximum Ratings

Parameter

Value / Range

Drain Voltage (VD)

29.5 V

Gate Voltage Range (VG)

-6 V to 0 V

Drain Current (ID)

456 mA

Gate Current (IG)

See plot page 18

Power Dissipation (PDISS), 85 °C

5 W

Input Power (PIN), CW,

50 Ω,

VD = 20 V, IDQ = 64 mA, TBASE = 85 °C

18 dBm

Input Power (PIN), CW, 3:1 VSWR,

VD = 20 V, IDQ = 64 mA, TBASE = 85 °C

18 dBm

Mounting Temperature (30 seconds)

320 ºC

Storage Temperature

-55 to +150 ºC

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions

is not implied.

Electrical Specifications

Parameter

Conditions (1) (2)

Min

Typ.

Max

Units

Operational Frequency Range

GHz

Output Power at Saturation, PSAT

PIN = +13 dBm

> 26

dBm

Large Signal Gain

PIN = +13 dBm

> 13

Small Signal Gain, S21

> 23

Input Return Loss, IRL

Output Return Loss, ORL

3RD Intermodulation Products, IM3

POUT/Tone = 20 dBm; Freq. = 35 GHz;

Δf = 100 MHz

-20

dBc

5TH Intermodulation Products, IM5

POUT/Tone = 20 dBm; Freq. = 35 GHz;

Δf = 100 MHz

-30

dBc

PSAT Temperature Coefficient

TDIFF =

−40 ºC to +85 ºC; PIN = +13 dBm

-0.02

dBm/ºC

S21 Temperature Coefficient

TDIFF =

−40 ºC to +85 ºC

-0.07

dB/ºC

Notes:

Test conditions unless otherwise noted: CW, VD = + 20 V, IDQ = 64 mA, VG = -2.5V +/- typical, TBASE

= +25 ºC, Z0 = 50 Ω

TBASE is back side of 20 mil CuMo carrier plate with AuSn solder

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