MMBT3904LP datasheet(2/9 Pages) FUTUREWAFER

2 / 9 page

www.futurewafer.com.tw

Document No.F51830A

05-Apr-2021 V2.0

MMBT3904 Family

40V Matched Pair

NPN Small Signal Transistors

Electrical Characteristics

Parameter

Symbol

Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

V BR –CEO

I C = 1mA,I B = 0

Collector-Base Breakdown Voltage

V BR –CBO

I C = 10uA,I E = 0

Emitter-Base Breakdown Voltage

V BR –EBO

I E = 10uA,I C = 0

6.0

Emitter Cut-off Current

I EBO

V EB = 6V,I C = 0

Collector Cut-off Current

I CBO

V CB = 30V,I E = 0

Parameter

Symbol

Condition

Min.

Typ.

Max.

Units

DC Current Gain

h FE

I c = 0.1mA,V CE = 1.0V

I c = 1.0mA,V CE = 1.0V

I c = 10mA,V CE = 1.0V

100

300

I c = 50mA,V CE = 1.0V

I c = 100mA,V CE = 1.0V 30

Collector-Emitter Saturation Voltage

V CE(sat)

I c = 10mA,I B = 1.0mA

200

I c = 50mA,I B = 5.0mA

300

Base-Emitter Saturation Voltage

V BE(sat)

I c = 10mA,I B = 1.0mA

650

850

I c = 50mA,I B = 5.0mA

950

On Characteristics

Small Signal Characteristics

Parameter

Symbol

Condition

Min.

Typ.

Max.

Units

Current Gain Bandwidth Product

f T

I C = 10mA,V CE = 20V,

f = 100MHZ

300

MHZ

Collector Output Capacitance

C OB

V CB = 10V,f = 100MHZ

4.0

Input Capacitance

C IBO

V EB = 0.5V,f = 1.0MHZ

8.0

Delay Time

T d

V CC = 3V,

V BE(OFF) = 0.5V,

I C = 10mA,

I B1 = 1mA

Rise Time

T r

Storage Time

T stg

V CC = 3V,

V BE(OFF) = 0.5V,

I C = 10mA,

I B1 = -I B2 = 1mA

200

Fall Time

T f

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