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NDS352AP bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện NDS352AP
Giải thích chi tiết về linh kiện  P-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDS352AP bảng dữ liệu(HTML) 2 Page - ON Semiconductor

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NDS352AP
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ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol
Parameter
Ratings
Unit
VDSS
Drain−Source Voltage
−30
V
VGSS
Gate−Source Voltage − Continuous
±20
V
ID
Maximum Drain Current – Continuous (Note 1a)
±0.9
A
Maximum Drain Current – Pulsed
±10
PD
Maximum Power Dissipation (Note 1a)
0.5
W
Maximum Power Dissipation (Note 1b)
0.46
TJ, TSTG
Operating and Storage Temperature Range
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RqJA
Thermal Resistance, Junction−to−Ambient (Note 1a)
250
°C/W
RqJC
Thermal Resistance, Junction−to−Case (Note 1)
75
°C/W
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design.
PD(t) +
TJ * TA
RqJA(t)
+
TJ * TA
RqJC ) RqCA(t)
+ I2D(t) RDS(ON)@T
J
Typical RqJA using the board layouts shown below on 4.5″x 5″ FR−4 PCB in a still air environment:
a) 250°C/W when mounted on a 0.02 in2 pad
of 2oz copper.
b) 270°C/W when mounted on a 0.001 in2 pad
of 2oz copper.



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