UT54ACS164245SWC datasheet(6/14 Pages) AEROFLEX

6 / 14 page

Notes:

1. All specifications valid for radiation dose

≤ 1E5 rad(Si) per MIL-STD-883, Method 1019.

2. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = VIH (min) + 20%, - 0%; VIL = VIL(max) + 0%,

- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within th e above specified range, but

are guaranteed to VIH (min) and VIL (max).

3. All combinations of OEx and DIRx

4. Per MIL-PRF-38535, for current density

≤ 5.0E5 amps/cm 2, the maximum product of load capacitance (per output buffer) times frequency should not exceed

3,765 pF-MHz.

5. Guaranteed by characterization.

6. Not more than one output may be shorted at a time for maximum duration of one second.

7. Power does not include power contribution of any CMOS output sink current.

8. Power dissipation specified per switching output.

9.Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS

at frequency of 1MHz and a signal amplitude of 50mV rms maximum.

1 0.Guaranteed; tested on a sample of pins per device.

11. Supplied as a design limit, but not guaranteed or tested.

total1

Power dissipation

5,7, 8

L = 50pF

VDD from 4.5 to 5.5

2.0

mW/

MHz

Ptotal2

Power dissipation

5, 7, 8

CL = 50pF

DD from 3.00 to 3.6

1.5

mW/

MHz

IDD

Standby Supply Current VDD1 or VDD2

Pre-Rad 25oC

Pre-Rad -55oC to +125oC

Post-Rad 25oC

VIN = VDD or VSS

DD = 5 .5

OE=VDD

100

500

µA

CIN

Input capacitance 9

ƒ = 1MHz @ 0V

VDD from 3.00 to 5.5

OUT

Output capacitance9

ƒ = 1MHz @ 0V

DD from 3.00 to 5.5

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