PP4B10AF datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV 1.0

K-27-3

N-Channel Enhancement Mode

Field Effect Transistor

PP4B10AF

TO-220F

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

100

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2.8

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS =100V, VGS = 0V

A

VDS = 100V, VGS = 0V, TJ = 55 °C

Drain-Source

On-State Resistance

RDS(ON)

VGS = 10V, ID = 20A

3.7

4.4

mΩ

Forward Transconductance

gfs

VDS = 5V, ID = 20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 50V, f = 1MHz

4372

Output Capacitance

Coss

757

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

0.9

Total Gate Charge

VDS = 50V , VGS = 10V,

ID = 20A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = 50V ,

ID  20A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 20A, VGS = 0V

1.2

Reverse Recovery Time

trr

IF = 20A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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