AOU417 datasheet(2/5 Pages) AOSMD

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AOU417

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

-1.4

-2

-2.7

ID(ON)

-40

TJ=125°C

Ω

gFS

VSD

-0.7

-1

-1.2

Ciss

1573

1900

Coss

319

Crss

211

6.7

Ω

Qg(10V)

29.3

Qg(4.5V)

Qgs

6.1

Qgd

7nC

tD(on)

11.7

tD(off)

32.5

trr

28.3

Qrr

20.5

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-10V, VDS=-5V

VGS=-10V, ID=-18A

Reverse Transfer Capacitance

IF=-18A, dI/dt=100A/µs

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-24V, VGS=0V

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Ω

VGS=-4.5V, ID=-10A

IS=-1A,VGS=0V

VDS=-5V, ID=-18A

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=0.83Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

Gate Source Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=-15V, f=1MHz

Gate Drain Charge

Total Gate Charge (10V)

VGS=-10V, VDS=-15V, ID=-18A

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal resistance

rating.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

Rev1: August 2005

Alpha & Omega Semiconductor, Ltd.

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