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ADRF5345BCCZN-R7 bảng dữ liệu(PDF) 1 Page - Analog Devices |
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ADRF5345BCCZN-R7 bảng dữ liệu(HTML) 1 Page - Analog Devices |
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1 / 11 page ![]() Data Sheet ADRF5345 High Linearity, Silicon SP4T Switch, 1.8 GHz to 3.8 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Reflective design ► Low Insertion Loss ► 0.35 dB to 2.8 GHz typical ► 0.40 dB to 3.8 GHz typical ► High power handling at TCASE = 105°C ► Long-term (>10 years) average ► Continuous wave power: 39 dBm ► LTE signal ► Average power: 39 dBm ► Peak power: 49 dBm ► High input linearity, IP3: 84 dBm typical ► ESD ratings ► HBM: 2000 V, Class 2 ► CDM: 1000 V, Class C3 ► Single-supply operation, integrated NVG ► Positive control, LVCMOS-/LVTTL- compatible ► 4 mm x 4 mm, 22-terminal LGA package APPLICATIONS ► 5G antenna tilting ► Wireless infrastructure ► Military and high reliability applications ► Test equipment ► Pin diode replacement FUNCTIONAL BLOCK DIAGRAM Figure 1. GENERAL DESCRIPTION The ADRF5345 is a high linearity, reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process. The ADRF5345 operates from 1.8 GHz to 3.8 GHz with a typical insertion loss lower than 0.40 dB and a typical input IP3 of 84 dBm. The device has an RF input power handling capability of 39 dBm for continuous wave signals and 39 dBm average and 49 dBm peak for long-term evolution (LTE) signals. The ADRF5345 incorporates an integrated negative voltage gener- ator (NVG) to operate with a single positive supply of 5 V (VDD) applied to the VDD pin drawing a 2 mA supply current. The device employs low voltage complementary metal-oxide semiconductor (LVCMOS)-/low voltage transistor to transistor logic (LVTTL)- com- patible controls. The ADRF5345 comes in a 4 mm × 4 mm, 22-terminal, RoHS-com- pliant, land grid array (LGA) package and operates between −40°C to +105°C. |
Số phần tương tự - ADRF5345BCCZN-R7 |
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Mô tả tương tự - ADRF5345BCCZN-R7 |
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