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STM32G070CB bảng dữ liệu(PDF) 46 Page - STMicroelectronics |
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STM32G070CB bảng dữ liệu(HTML) 46 Page - STMicroelectronics |
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46 / 93 page ![]() Electrical characteristics STM32G070CB/KB/RB 46/93 DS12766 Rev 2 Table 24. Current consumption in Run and Low-power run modes at different die temperatures Symbol Parameter Conditions Typ Max(1) Unit General fHCLK Fetch from(2) 25°C 85°C 25°C 85°C IDD(Run) Supply current in Run mode Range 1; PLL enabled; fHCLK = fHSI bypass (≤16 MHz), fHCLK = fPLLRCLK (>16 MHz); (3) 64 MHz Flash memory 6.9 7.0 8.0 8.4 mA 56 MHz 6.1 6.3 7.1 7.6 48 MHz 5.5 5.6 6.2 6.8 32 MHz 3.9 4.0 4.8 5.2 24 MHz 3.1 3.2 3.7 4.3 16 MHz 2.0 2.1 2.5 3.0 64 MHz SRAM 6.6 6.8 7.6 7.9 56 MHz 5.8 6.1 6.7 7.0 48 MHz 5.2 5.3 6.0 6.2 32 MHz 3.6 3.7 4.2 4.6 24 MHz 2.9 3.0 3.4 3.7 16 MHz 1.9 1.9 2.3 2.5 Range 2; PLL enabled; fHCLK = fHSI bypass (≤16 MHz), fHCLK = fPLLRCLK (>16 MHz); (3) 16 MHz Flash memory 1.5 1.7 2.0 2.4 8 MHz 0.9 1.0 1.4 1.6 2 MHz 0.3 0.3 0.6 1.0 16 MHz SRAM 1.5 1.5 1.9 2.2 8 MHz 0.8 0.9 1.3 1.4 4 MHz 0.4 0.6 0.8 1.1 2 MHz 0.3 0.3 0.6 1.0 IDD(LPRun) Supply current in Low-power run mode PLL disabled; fHCLK = fHSE bypass (> 32 kHz), fHCLK = fLSE bypass (= 32 kHz); (3) 2 MHz Flash memory 242 281 636 954 µA 1 MHz 116 171 606 924 500 kHz 74 116 558 840 125 kHz 29 73 540 624 32 kHz 19 62 450 570 2 MHz SRAM 219 254 582 840 1 MHz 105 154 516 792 500 kHz 67 105 438 750 125 kHz 26 65 402 528 32 kHz 17 61 390 426 1. Based on characterization results, not tested in production. 2. Prefetch and cache enabled when fetching from Flash 3. VDD = 3.0 V for values in Typ columns and 3.6 V for values in Max columns, all peripherals disabled, cache enabled, prefetch disabled for code and data fetch from Flash and enabled from SRAM |
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