2

RF Device Data

Freescale Semiconductor, Inc.

MMRF1012NR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

IV

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

—

—

10

Adc

Drain--Source Breakdown Voltage

120

—

—

Vdc

Zero Gate Voltage Drain Leakage Current

—

—

50

Adc

Zero Gate Voltage Drain Leakage Current

—

—

2.5

mA

On Characteristics

Gate Threshold Voltage

1

1.68

3

Vdc

Gate Quiescent Voltage

1.5

2.68

3.5

Vdc

Drain--Source On--Voltage

—

0.26

—

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

—

0.13

—

pF

Output Capacitance

—

7.3

—

pF

Input Capacitance

—

16.3

—

pF

Power Gain

22.5

23.9

25.5

dB

Drain Efficiency

58

62

—

%

Input Return Loss

IRL

—

--14

--9

dB

ATTENTION: The MMRF1012N is a high power device and special considerations must be followed in board

design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum

allowable operating junction temperature. Refer to Freescale Application Note AN1907 (for solder reflow

mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of this device.