MSCSM120HM063CAG datasheet(4/16 Pages) MICROCHIP

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The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM120HM063CAG device.

Table 1-3. Dynamic Characteristics per SiC MOSFET

Symbol

Characteristics

Test Conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VGS = 0 V

VDS = 1000 V

f = 1 MHz

—

Coss

Output capacitance

—

Crss

Reverse transfer

capacitance

—

0.1

—

Total gate charge

VGS = –5 V/20 V

VBus = 800 V

ID = 160 A

—

928

—

Qgs

Gate–Source charge

—

164

—

Qgd

Gate–Drain charge

—

200

—

Td(on)

Turn-on delay time

VGS = –5 V/20 V

VBus = 600 V

ID = 200 A; TJ = 150 °C

RG(ON) = 2 Ω; RG(OFF) = 1.2 Ω

—

Rise time

—

Td(off)

Turn-off delay time

—

180

—

Fall time

—

Eon

Turn-on energy

VGS = –5/20 V

VBus = 600 V

ID = 200 A

RG(ON) = 2 Ω

RG(OFF) = 1.2 Ω

TJ = 150 °C

—

4.1

—

Eoff

Turn-off energy

TJ = 150 °C

—

3.6

—

RGint

Internal gate resistance

—

1.5

—

RthJC

Junction-to-case thermal resistance

—

0.11

°C/W

The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM120HM063CAG

device.

Table 1-4. Body Diode Ratings and Characteristics per SiC MOSFET

Symbol

Characteristics

Test Conditions

Min

Typ

Max

Unit

VSD

Diode forward

voltage

VGS = 0 V; ISD = 160 A

—

VGS = –5 V; ISD = 160 A

—

4.2

—

trr

Reverse recovery

time

ISD = 160 A

VGS = –5 V

VR = 800 V

diF/dt = 4000 A/µs

—

Qrr

Reverse recovery

charge

—

2200

—

Irr

Reverse recovery

current

—

MSCSM120HM063CAG

Electrical Specifications

Datasheet

DS00003929A-page 4

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