FDPC8016S datasheet(3/12 Pages) ONSEMI

3 / 12 page

FDPC8016S

www.onsemi.com

PINOUT DESCRIPTION

Name

Description

Name

Description

Name

Description

HSG

High Side Gate

3. 4, 10

V+(HSD)

High Side Drain

LSG

Low Side Gate

Gate Return

5, 6, 7

Switching Node,

Low Side Drain

GND(LSS)

Low Side Source

MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)

Symbol

Parameter

Unit

VDS

Drain to Source Voltage

25 (Note 5)

VGS

Gate to Source Voltage

±12

Drain Current

Continuous (TC = 25°C)

Continuous (TA = 25°C)

Pulsed (TA = 25°C) (Note 4)

20 (Note 1a)

100

35 (Note 1b)

140

EAS

Single Pulsed Avalanche Energy (Note 3)

216

Power Dissipation for Single Operation

(TC = 25°C)

(TA = 25°C)

2.1 (Note 1a)

2.3 (Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Unit

RqJC

Thermal Resistance, Junction to Case

6.0

3.0

_C/W

RqJA

Thermal Resistance, Junction to Ambient

60 (Note 1a)

55 (Note 1b)

_C/W

RqJA

Thermal Resistance, Junction to Ambient

130 (Note 1c)

120 (Note 1d)

_C/W

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

05OD/15OD

FDPC8016S

Power Clip 56

13″

12 mm

3,000 Units

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max

Unit

OFF CHARACTERISTICS

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

ID = 1 mA, VGS = 0 V

−

DBVDSS/DTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25°C

ID = 10 mA, referenced to 25°C

−

mV/_C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

−

500

IGSS

Gate to Source Leakage Current,

Forward

VGS = 12 V / −8 V, VDS= 0 V

−

±100

ON CHARACTERISTICS

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

VGS = VDS, ID = 1 mA

0.8

1.0

1.3

1.5

2.5

DVGS(th)/DTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 μA, referenced to 25°C

ID = 10 mA, referenced to 25°C

−

−4

−3

−

mV/_C

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