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FDPC8014AS bảng dữ liệu(PDF) 8 Page - ON Semiconductor

tên linh kiện FDPC8014AS
Giải thích chi tiết về linh kiện  MOSFET ??Dual, N-Channel, POWERTRENCH, Power Clip, Asymmetric 25 V
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TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)
0
20
406080
0
2
4
6
8
10
0.1
1
10
100
1000
10000
Crss
Coss
Ciss
0.001
0.01
0.1
1
10
100
1000
1
10
100
25
50
75
100
125
0
32
64
96
128
160
0.1
1
10
0.1
1
10
100
1000
2000
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
10000
100
150
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source Voltage
Figure 22. Unclamped Inductive Switching Capability
Figure 23. Maximum Continuous Drain Current vs.
Case Temperature
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power Dissipation
25
70
Qg, GATE CHARGE (nC)
ID = 40 A
VDD = 13 V
VDD = 10 V
VDD = 15 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
f = 1 MHz
VGS = 0 V
TJ = 125°C
tAV, TIME IN AVALANCHE (ms)
TJ = 25°C
TJ = 100°C
TC, CASE TEMPERATURE (°C)
VGS = 4.5 V
VGS = 10 V
RqJC = 3.3°C/W
t, PULSE WIDTH (s)
CURVE BENT TO
MEASURED DATA
VDS, DRAIN to SOURCE VOLTAGE (V)
SINGLE PULSE
TJ = MAX RATED
RqJC = 3.3°C/W
TC = 25°C
THIS AREA IS LIMITED
BY rDS(on)
10 ms
100 ms
1 ms
10 ms
100 ms/DC
SINGLE PULSE
RqJC = 3.3°C/W
TC = 25°C



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