MSCSM70HM038CAG datasheet(3/16 Pages) MICROCHIP

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Electrical Specifications

The following sections show the electrical specifications of the MSCSM70HM038CAG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings (per SiC MOSFET) of the MSCSM70HM038CAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

VDSS

Drain-Source voltage

700

Continuous drain current

TC = 25 °C

464

TC = 80 °C

369

IDM

Pulsed drain current

900

VGS

Gate-Source voltage

–10/25

RDS(on)

Drain-Source ON resistance

4.8

mΩ

Power dissipation

TC = 25 °C

1277

The following table lists the electrical characteristics (per SiC MOSFET) of the MSCSM70HM038CAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

IDSS

Zero gate voltage

drain current

VGS = 0 V; VDS = 700 V

—

400

µA

RDS(on)

Drain-Source on

resistance

VGS = 20 V

ID = 160 A

TJ = 25 °C

—

3.8

4.8

mΩ

TJ = 175 °C

—

4.8

—

VGS(th)

Gate threshold

voltage

VGS = VDS; ID = 16 mA

1.9

2.4

—

IGSS

Gate-Source

leakage current

VGS = 20 V; VDS = 0 V

—

400

MSCSM70HM038CAG

Electrical Specifications

Datasheet

DS00003928A-page 3

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