MSC010SDA070B

Zero Recovery Silicon Carbide Schottky Diode

Product Overview

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance

over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The

MSC010SDA070B device is a 700 V, 10 A SiC SBD in a two-lead TO-247 package.

Features

The following are key features of the MSC010SDA070B device:

• No reverse recovery

• Low forward voltage

• Low leakage current

• Avalanche-energy rated

• RoHS compliant

Benefits

The following are benefits of the MSC010SDA070B device:

• High switching frequency

• Low switching losses

• Low noise (EMI) switching

• Higher reliability systems

• Increased system power density

Applications

The MSC010SDA070B device is designed for the following applications:

• Power factor correction (PFC)

• Anti-parallel diode

– Switch-mode power supply

– Inverters/converters

– Motor controllers

• Freewheeling diode

– Switch-mode power supply

– Inverters/converters

• Snubber/clamp diode

Datasheet

DS-00003878A-page 1