TPCP8401 datasheet(4/5 Pages) TOSHIBA

4 / 5 page

TPCP8401

2002-09-09

N-ch

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V



±10

µA

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V



µA

V (BR) DSS

ID = 10 mA, VGS = 0 V



Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V



Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3



2.5

VGS = 4.5 V, ID = 2.25 A



Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.25 A



Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.25 A

TBD



Input capacitance

Ciss



TBD



Reverse transfer capacitance

Crss



TBD



Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz



TBD



Rise time



TBD



Turn-ON time

ton



TBD



Fall time



TBD



Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 µs



TBD



Total gate charge

(gate-source plus gate-drain)



TBD



Gate-source charge 1

Qgs1



TBD



Gate-drain (“miller”) charge

Qgd

VDD ∼− 24 V, VGS = 10 V,

ID =4.5 A



TBD



Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP



Forward voltage (diode)

VDSF

IDR =4.5 A, VGS = 0 V



−1.2

RL =

5.0

Ω

VDD ∼− 15 V

0 V

VGS

10 V

ID = 2.25 A

VOUT

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