FDWS9510L-F085 datasheet(2/7 Pages) ONSEMI

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FDWS9510L−F085

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

BVDSS

Drain−to−Source Breakdown Voltage

ID = −250 mA, VGS = 0 V

−40

−

IDSS

Drain−to−Source Leakage Current

VDS = −40 V,

VGS = 0 V

TJ = 25°C

−

TJ = 175°C (Note 4)

−

IGSS

Gate−to−Source Leakage Current

VGS = ±16 V

−

±100

ON CHARACTERISTICS

VGS(th)

Gate−to−Source Threshold Voltage

VGS = VDS, ID = −250 mA

−1

−1.8

−3

RDS(on)

Drain−to−Source On−Resistance

ID = −25 A, VGS = −4.5 V

−

ID = −50 A

VGS = −10 V

TJ = 25°C

−

13.5

TJ = 175°C (Note 4)

−

18.8

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VDS = −20 V, VGS = 0 V, f = 1 MHz

−

2320

−

Coss

Output Capacitance

−

811

−

Crss

Reverse Transfer Capacitance

−

Gate Resistance

VGS = 0.5 V, f = 1 MHz

−

Qg(tot)

Total Gate Charge

VGS = 0 to −10 V

−

Qg(th)

Threshold Gate Charge

VGS = 0 to −1 V

−

Qgs

Gate−to−Source Gate Charge

VDD = −20 V,

ID = −50 A

−

Qgd

Gate−to−Drain “Miller” Charge

−

SWITCHING CHARACTERISTICS

ton

Turn−On Time

VDD = −20 V, ID = −50 A,

VGS = −10 V, RGEN = 6 W

−

td(on)

Turn−On Delay Time

−

Turn−On Rise Time

−

td(off)

Turn−Off Delay Time

−

110

−

Turn−Off Fall Time

−

toff

Turn−Off Time

−

222

DRAIN−SOURCE DIODE CHARACTERISTICS

VSD

Source−to−Drain Diode Voltage

ISD = −50 A, VGS = 0 V

−

−1

−1.25

ISD = −25 A, VGS = 0 V

−

−0.9

−1.2

Trr

Reverse Recovery Time

IF = −50 A, dISD/dt = 100 A/ms

−

Qrr

Reverse Recovery Charge

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production

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