SS24FL-SS210FL

Surface Mount Schottky Barrier Rectifier

Document No.: F218331

08-NOV-2021 V 2.1

www.futurewafer.com.tw

FQE-001-04

1/9

1. Synopsis

1-1. General Description

These Devices Employ The Schottky Barrier Principle in a

Metal−to−Silicon Power Rectifier. Features Epitaxial

Construction With Oxide Passivation and Metal Overlay

Contact. Ideally Suited For Low Voltage, High Frequency

Switching Power Supplies; Free Wheeling Diodes and

Polarity Protection Diodes.

1-2. Feature List

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High Surge Current Capability

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Low Power Loss, High Efficiency

1-3. Applications

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For Use In Low Voltage High Frequency

Inverters, Freewheeling, DC/DC Converters,

and Polarity Protection Applications.

1-4. Benefits

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Essentially No Switching Losses

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Higher Efficiency

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Reduction Of Heat Sink Requirements

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Parallel Devices Without Thermal Runaway

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Higher System Reliability Due To Lower Operating Temperatures

1-5. Mechanical Characteristics

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Molded JEDEC Package: SOD-123FL

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Packing: Tape and Reel

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Flammability rating UL 94V-0

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Halogen Free

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JEDEC MSL Classification: Level 1

Cathode

Anode

SOD-123FL