FDMS1D2N03DSD datasheet(2/13 Pages) ONSEMI

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FDMS1D2N03DSD

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MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)

Symbol

Parameter

Unit

VDS

Drain to Source Voltage

VGS

Gate to Source Voltage

+16/−12

Drain Current

− Continuous (TC = 25°C) (Note 5)

164

− Continuous (TC = 85°C) (Note 5)

126

− Continuous (TA = 25°C)

19 (Note 1a)

37 (Note 1b)

− Continuous (TA = 85°C)

15 (Note 1a)

29 (Note 1b)

− Pulsed (TA = 25°C) (Note 4)

362

1199

EAS

Single Pulsed Avalanche Energy (Note 3)

121

337

Power Dissipation for Single Operation

(TC = 25°C)

(TA = 25°C)

2.1 (Note 1a)

2.3 (Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Unit

RqJC

Thermal Resistance, Junction to Case

4.8

3.0

_C/W

RqJA

Thermal Resistance, Junction to Ambient

60 (Note 1a)

55 (Note 1b)

_C/W

RqJA

Thermal Resistance, Junction to Ambient

130 (Note 1c)

120 (Note 1d)

_C/W

PACKAGE MARKING AND ORDERING INFORMATION

Device

Top Marking

Package

Reel Size

Tape Width

Quantity

FDMS1D2N03DSD

Power Clip 56 (PGFN8)

(Pb-Free / Halogen Free)

″

12 mm

3,000 Units

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max

Unit

OFF CHARACTERISTICS

BVDSS

Drain to Source Breakdown Voltage

ID = 1 mA, VGS = 0 V

−

DBVDSS/DTJ

Breakdown Voltage Temperature

Coefficient

ID = 10 mA, referenced to 25_C

−

mV/

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

−

500

IGSS

Gate to Source Leakage Current,

Forward

VGS = +16 V/−12 V,

VDS= 0 V

−

±100

ON CHARACTERISTICS

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 320 mA

VGS = VDS, ID = 1 mA

0.8

1.0

1.3

1.5

2.5

3.0

DVGS(th)/DTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 1 mA, referenced to 25_C

ID = 10 mA, referenced to 25_C

−

−3

−

mV/

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