MSCSM170TAM15CTPAG datasheet(3/17 Pages) MICROCHIP

tên linh kiện	MSCSM170TAM15CTPAG

Giải thích chi tiết về linh kiện	Triple Phase Leg SiC MOSFET Power Module

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Electrical Specifications

This section provides the electrical specifications of the MSCSM170TAM15CTPAG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM170TAM15CTPAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

VDSS

Drain-Source voltage

1700

Continuous drain current

TC = 25 °C

179

TC = 80 °C

142

IDM

Pulsed drain current

360

VGS

Gate-Source voltage

–10/23

RDS(on)

Drain-Source ON resistance

mΩ

Power dissipation

TC = 25 °C

843

The following table lists the electrical characteristics per SiC MOSFET of the MSCSM170TAM15CTPAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

IDSS

Zero gate voltage

drain current

VGS = 0 V; VDS = 1700 V

—

300

µA

RDS(on)

Drain–Source on

resistance

VGS = 20 V

ID = 90 A

TJ = 25 °C

—

11.7

mΩ

TJ = 175 °C

—

20.8

—

VGS(th)

Gate threshold

voltage

VGS = VDS; ID = 7.5 mA

1.8

3.2

—

IGSS

Gate–Source

leakage current

VGS = 20 V; VDS = 0 V

—

300

MSCSM170TAM15CTPAG

Electrical Specifications

Datasheet

DS00003964A-page 3

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