FDMC0310AS datasheet(4/8 Pages) ONSEMI

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Typical Characteristics T

J = 25 °C unless otherwise noted

Figure 1.

0.0

0.5

1.0

1.5

2.0

100

GS = 4 V

GS = 3 V

GS = 4.5 V

GS = 3.5 V

GS = 6 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

GS = 10 V

DS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics

Figure 2.

020

100

GS = 4 V

GS = 3 V

GS = 6 V

GS = 3.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

GS = 4.5 V

GS = 10 V

Normalized On-Resistance

vs. Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

-75

-50

-25

100

125

150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 19 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (

)

vs. Junction Temperature

Figure 4.

2468

TJ = 125 oC

ID = 19 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs. Gate to

Source Voltage

Figure 5. Transfer Characteristics

1.0

1.5

2.0

2.5

3.0

3.5

4.0

100

TJ = 125 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

100

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs. Source Current

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