LM3420 datasheet(1/6 Pages) LEIDITECH

tên linh kiện	LM3420

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Power MOSFET

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Enhancement Mode Power MOSFET

Description

The LM3420 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

uni-directional or bi-directional load switch.

General Features

●

VDS = 20V,ID = 6A

RDS(ON) < 35mΩ @ VGS=2.5V

RDS(ON) < 28mΩ @ VGS=4.5V

●

High Power and current handing capability

●

Lead free product is acquired

●

Surface Mount Package

Application

●

Uni-directional Load switch

●

Bi-directional Load switch

D

G

S

Schematic diagram

SOT-23 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3420

LM3420

SOT-23

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±10

V

Drain Current-Continuous

ID

6

A

Drain Current-Pulsed

(Note 1)

IDM

30

A

Maximum Power Dissipation

PD

1.25

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA

100

/W

℃

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

20

22

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

-

1

μA

Rev : 01.06.2014

1/6

www.leiditech.com

LM3420

N-Channel

Số phần tương tự - LM3420

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