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LM3D0210 bảng dữ liệu(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

tên linh kiện LM3D0210
Giải thích chi tiết về linh kiện  N and P-Channel MOSFETS
PDF  8 Pages
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nhà sản xuất  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Trang chủ  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM3D0210 bảng dữ liệu(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Product Summary
BVDSS
RDS(ON)
ID
20V
22m
6.5A
-20V
37m
-4A
Description
These N+P Dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This
advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency fast switching applications.
Mechanical Data
Case: DFN 3.3×3.3-8L
Circuit Configuration: See diagram below
Applications
Notebook
Networking
Load Switch
Hand-held Instruments
Features
Fast switching
Green Device Available
Suit for 1.8V Gate Drive Applications
High Power and current handing capability
Rev 2.0 :
www.leiditech.com
12.01.2019
1/8
LM3D0210
N and P-Channel MOSFETS


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