AP01L60P datasheet(2/6 Pages) A-POWER

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Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=1mA

/ -

600

VGS=0V, ID=1mA

/ A

650

VGS=0V, ID=1mA

/ H

700

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.6

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=2A

2.4

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=2A

2.5

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=600V, VGS=0V

Drain-Source Leakage Current (Tj=150

oC)

VDS=480V,VGS=0V

100

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=4A

16.7

Qgs

Gate-Source Charge

VDS=480V

4.1

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

4.9

td(on)

Turn-on Delay Time

VDD=300V

Rise Time

ID=4A

8.3

td(off)

Turn-off Delay Time

RG=10Ω,VGS=10V

23.8

Fall Time

RD=75Ω

8.2

Ciss

Input Capacitance

VGS=0V

950

Coss

Output Capacitance

VDS=25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.5V

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

Tj=25℃, IS=4A, VGS=0V

1.5

Notes:

1.Pulse width limited by safe operating area.

2.Starting Tj=25

oC , V

DD=50V , L=25mH , RG=25Ω , IAS=4A.

3.Pulse width <300us , duty cycle <2%.

Ordering Code

AP04N70BP- X : X Denote BVDSS Grade

Blank = BVDSS 600V

= BVDSS 650V

= BVDSS 700V

AP04N70BP

±100

± 30V

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