TQP200002 datasheet(2/10 Pages) QORVO

2 / 10 page

TQP200002

Dual ESD Diode

Data Sheet

–Rev H, August 12, 2019 | Subject to change without notice

- 2 of 10 -

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Absolute Maximum Ratings

Parameter

Rating

Supply Voltage (VDD)

+25

Total Power Dissipation

+600 mW

IEC 61000-4-2 Air Discharge

+3000 V

IEC 61000-4-2 Contact Discharge

+3000 V

JEDEC Human Body Model (HBM)

+8000 V

Storage Temperature Range

−65 to +150 °C

Operating Temperature Range

40 to +85 °C

Maximum Junction Temperature (for >106 hours MTTF)

+160

°C

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended

application of Absolute Maximum Rating conditions to the device may reduce device reliability.

Electrical Specifications

Parameter

Condition (1)

Min

Typ

Max

Unit

Supply Voltage (VD13)

-7

Supply Voltage (VD12)

-7

Supply Voltage (VD23)

-17

+17

Trigger Voltage (V1)

P1, 3

+13

+18

+23

Clamp Voltage (VC11)

P1, 3

+10

+15

+20

Leakage Current (Ileak1)

1 V

+20

Leakage Current (Ileak1)

15 V

+500

Capacitance (C1)

1 V, 10 MHz

+290

Trigger Voltage (V2)

P1, 2

+20

+25

+30

Clamp Voltage (VC12)

P1, 2

+10

+15

+20

Leakage Current (Ileak2)

1 V

+20

Leakage Current (Ileak2)

15 V

+500

Capacitance (C2)

1 V, 10 MHz

+290

Trigger Voltage (V3)

P2, 3

+31

+41

+46

Clamp Voltage (VC13)

P2, 3

+20

+30

+40

Leakage Current (Ileak3)

1 V

+15

Leakage Current (Ileak3)

15 V

+300

Capacitance (C3)

1 V, 10 MHz

+220

Notes:

1. Typical performance at these conditions: Temp = +25

°C, 75 Ω system

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