© Semiconductor Components Industries, LLC, 2011

May, 2011 − Rev. 0

1

Publication Order Number:

AND9007/D

AND9007/D

Understanding TLP

Datasheet Parameters

Prepared by: Robert Ashton

ON Semiconductor

Introduction

Transmission Line Pulse (TLP) is a measurement

technique used in the Electrostatic Discharge (ESD) arena

to characterize performance attributes of devices under ESD

stresses. TLP is able to obtain current versus voltage (I−V)

curves in which each data point is obtained with a 100 ns

long pulse, with currents up to 40 A. TLP was first used in

the ESD field to study human body model (HBM) in

integrated circuits, but it is an equally valid tool in the field

of system level ESD. The applicability of TLP to system

level ESD is illustrated in Figure 1, which compares an 8 kV

IEC 61000−4−2 current waveform with TLP current pulses

of 8 and 16 A. The current levels and time duration for the

pulses are similar and the initial rise time for the TLP pulse

is comparable to the rise time of the IEC 61000−4−2’s initial

current spike. This application note will give a basic

introduction to TLP measurements and explain the

datasheet

parameters

extracted

from

TLP

for

ON Semiconductor’s protection products. For more

information on TLP measurements please see application

note AND9006/D, “Using Transmission Line Pulse

Measurements

to

Understand

Protection

Product

Characteristics”.

Figure 1. Comparison of a Current Waveform of IEC 61000−4−2 with TLP Pulses at 8 and 16 A

Note that the IEC 61000−4−2 ESD waveforms is true to the Standard and is shown here as captured on an oscilloscope. The points A, B,

and C show the points on the waveforms specified in IEC 61000−4−2.

http://onsemi.com

APPLICATION NOTE