TGA2976-SMEVB datasheet(3/18 Pages) QORVO

tên linh kiện	TGA2976-SMEVB

Giải thích chi tiết về linh kiện	0.1 ??3.0 GHz 10W GaN Power Amplifier

PDF	18 Pages

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nhà sản xuất	QORVO [Qorvo, Inc]

Trang chủ	https://www.qorvo.com/

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TGA2976-SM

0.1 – 3.0 GHz 10 W GaN Power Amplifier

Data Sheet Rev. D, May 2020 | Subject to change without notice

3 of 18

www.qorvo.com

Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (θJC) (1)

Tbase = 85 °C, VD(2) = 40 V (CW), IDQ = 360 mA,

ID_Drive = 655 mA, PIN = 27

dBm, POUT = 40 dBm,

PDISS = 17.4

3.55

ºC/W

Channel Temperature, TCH (Under RF) 3

146.8

°C

Thermal Resistance (θJC) (1)

Tbase = 85 °C, VD(2) = 50 V (CW), IDQ = 360 mA,

ID_Drive = 655 mA, PIN = 27

dBm, POUT = 40 dBm,

PDISS =

23.6 W

3.70

ºC/W

Channel Temperature, TCH (Under RF) 3

172.3

°C

Notes:

Thermal resistance measured at back of package.

The drain voltage for Cascode amplifier transistor is ½ of VD

IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability

Estimates

Power Dissipation and Maximum Gate Current

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