2

TGA4522

May 2009 © Rev -

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Drain Voltage

8 V

2/

Vg

Gate Voltage Range

-2 TO 0 V

Id

Drain Current

700 mA

2/ 3/

⏐Ig⏐

Gate Current

16 mA

3/

Input Continuous Wave Power

23 dBm

Power Dissipation

4.2 W

2/

Operating Channel Temperature

200 °C

5/ 6/

Mounting Temperature (30 Seconds)

320 °C

Storage Temperature

-65 to 150 °C

1/

These ratings represent the maximum operable values for this device.

2/

3/

Total current for the entire MMIC.

4/

When operated at this bias condition (with RF applied) at a base plate temperature of 70 °C, the

median life is 7.3E+3 hrs.

5/

Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

6/

These ratings apply to each individual FET.