NSPM3042MXT5G datasheet(2/8 Pages) ONSEMI

2 / 8 page

NSPM3042

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Bi−Directional Surge Protection

IPP

VRWM

VC VBR

VRWM

VBR

RDYN

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

I/O Pin to GND

Pin 1 to 2

Pin 2 to 1

4.8

4.5

Breakdown Voltage

VBR

IT = 1 mA, I/O Pin to GND

Pin 1 to 2

Pin 2 to 1

4.85

4.55

5.2

5.0

6.0

Reverse Leakage Current

VRWM = 4.8 V, Pin 1 to Pin 2

VRWM = 4.5 V, Pin 2 to Pin 1

0.5

Clamping Voltage

IEC61000−4−2,

±8 kV Contact

See Figures 1 & 2

Clamping Voltage TLP (Note 1)

IPP = 8 A, IEC61000−4−2 Level 2 Equivalent

(

±4 kV Contact, ± 8 kV Air)

5.50

IPP = 16 A, IEC61000−4−2 Level 4 Equivalent

(

±8 kV Contact, ± 15 kV Air)

5.74

Reverse Peak Pulse Current

IPP

IEC61000−4−5 (8 x 20

ms) per Figure 14

Clamping Voltage 8x20

Waveform per Figure 14 (Note 2)

IPP = 1 A

IPP = 43 A

4.9

7.4

6.2

8.0

Dynamic Resistance

RDYN

100 ns TLP Pulse

0.03

Junction Capacitance

VR = 0 V, f = 1 MHz

200

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP condtions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window: t1 = 70 ns to t2 = 90 ns.

2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.

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