QPD1025LEVB2 datasheet(10/27 Pages) QORVO

tên linh kiện	QPD1025LEVB2

Giải thích chi tiết về linh kiện	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

PDF	27 Pages

Scroll/Zoom	100%

nhà sản xuất	QORVO [Qorvo, Inc]

Trang chủ	https://www.qorvo.com/

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10 / 27 page

QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Datasheet Rev. K, May 2020

│ Subject to changewithout notice

- 10 of 26-

www.qorvo.com

Measured Load-Pull Smith Charts at 65V 1, 2, 3

Notes:

Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See

”Pin Configuration and Description” for load pull reference planes where the performance was measured.

1.2GHz, Load-pull

59.8

59.6

59.4

59.2

58.6

57.8

57.2

19.4

18.9

18.4

17.9

17.4

75.4

74.4

71.4

69.4

68.4

66.4

• Max Power is 59.8dBm

at Z = 1.81-0.55i

 = -0.2313-0.1408i

• Max Gain is 19.6dB

at Z = 1.11+1.09i

 = -0.3639+0.3617i

• Max DEff is 75.5%

at Z = 1.81+0.99i

 = -0.1967+0.2463i

Zo = 3

3dB Compression Referenced to Peak Gain

Zs(1fo) = 1.6-2.11i

Zs(2fo) = 0.44+1.11i

Zs(3fo) = 0.52+0.18i

Zl(2fo) = 0.77+1.32i

Zl(3fo) = 2.18+0.35i

Power

Gain

DEFF

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