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Assembly Guidelines

Assembly Diagram

ver 1.1 1018

Applications Information

The backside of the CMD291 is RF ground. Die attach should be accomplished with electrically and

thermally conductive epoxy or eutectic attach. Standard assembly procedures should be followed for

high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF

transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on

chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use

of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.

The RF input and output require a double bond wire as shown.

The semiconductor is 70 um thick and should be handled by the sides of the die or with a custom collet.

Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle

with care.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions

should be observed during handling, assembly and test.

CMD291

16-24 GHz Driver Amplifier

(example: Presidio part

MVB4080X104ZGK5R3L)

RF out

RF in

(example: Presidio part

LSA1515B101M2H5R-L)

To Vgg

100 pF BYPASS CAP

0.1 uF BYPASS CAP

0.1 uF BYPASS CAP

100 pF BYPASS CAP

to Vdd