STP20NM60A datasheet(2/12 Pages) STMICROELECTRONICS

2 / 12 page

STB20NM60A-1/STP20NM60A/STF20NM60A

2/12

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤ 20A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE =25 °C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Value

Unit

STB20NM60A-1

STP20NM60A

STF20NM60A

VGS

Gate-source Voltage

±30

Drain Current (continuous) at TC =25°C

20(*)

Drain Current (continuous) at TC = 100°C

12.6

12.6(*)

IDM ( )

Drain Current (pulsed)

80(*)

PTOT

Total Dissipation at TC =25°C

192

Derating Factor

1.2

0.36

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

VISO

Insulation Winthstand Voltage (DC)

2500

Tstg

Storage Temperature

–55 to 150

°C

Max. Operating Junction Temperature

I2PAK/TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case

Max

0.65

2.8

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS =0

600

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =± 30V

±100

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 10A

0.25

0.29

Ω

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