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RCEC-850 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
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RCEC-850 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() RCEC 850 www.vishay.com Vishay MCB Revision: 08-Feb-2021 2 Document Number: 32573 For technical questions, contact: mcbfixedresistors@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • All tests were done in Vishay MCB laboratories conditions DISSIPATION Permanent Applicable Power (W) as a Function of Bottom Case Temperature (°C) OVERLOAD Intermittent Overload (Exceptional Operation) Bottom Case Temperature +85 °C PERFORMANCES TESTS CONDITIONS REQUIREMENTS TYPICAL VALUES Overload 1200 W / 10 s with θbottom case = 85 °C ± 2 % or ± (0.5 % + 0.05 Ω) < 0.2 % Damp heat 4 days 40 °C 93 % HR ± 2 % or ± (0.5 % + 0.05 Ω) < 0.2 % VRT -55 °C / +125 °C 21 cycles ± 2 % or ± (0.5 % + 0.05 Ω) < 0.1 % Shock 18 shocks 3 positive and 3 negative per axis - 100 m/s2 and 11 ms (IEC 60068-2-27, Ea) ± (0.5 % + 0.05 Ω) < 0.1 % Vibrations 10 sweeps/axis - 7.5 mm at 5 Hz to 8 Hz, 20 m/s2 at 8 Hz to 200 Hz and 40 m/s2 at 200 Hz to 500 Hz (IEC 60068-2-6, Fc) ± (0.5 % + 0.05 Ω) < 0.1 % Terminal strength 200 Ncm/100 N ± 1 % or ± (0.5 % + 0.05 Ω) < 0.1 % 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 0 20406080 100 120 140 160 Title Temperature (°C) P = f (T°) 10 100 1000 10000 0 500 1000 1500 2000 2500 110 100 1000 Title Time (s) P = f (t) ENERGY R < 390 Ω R > 390 Ω Repetitive operation = 8 J Pulse τ = 50 μs Repetitive operation = 4 J Pulse τ = 50 μs Accidental operation = 20 J Pulse τ = 50 μs 120 pulses Other τ values: consult us |
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