ACE12H016B datasheet(1/3 Pages) ACE

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ACE12H016B

20V Complementary Enhancement Mode Power MOSFET

VER 1.1

1

Description

⚫

load switch

⚫

battery protection applications

Features

N-Channel

⚫

VDS= 20V

⚫

ID=4.2A

⚫

RDS(ON)

⚫

VGS= 4.5V, TYP 29mΩ

⚫

VGS= 2.5V, TYP 36mΩ

P-Channel

⚫

VDS= -20V

⚫

ID=-2.6A

⚫

RDS(ON)

⚫

VGS= -4.5V, TYP 83mΩ

⚫

VGS= -2.5V, TYP 107mΩ

Absolute Maximum Ratings @TA=25℃ unless otherwise noted

Parameter

Symbol

N-Ratings

P-Ratings

Unit

Drain-Source Voltage

VDSS

20

-20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current

(Continuous) *AC

TA=25°C

ID

4.3

-2.6

A

TA=70°C

3.4

-2.1

Drain Current (Pulse) *B

IDM

13

-13

A

Power Dissipation

TA=25°C

PD

1.1

W

Operating Temperature/ Storage Temperature

TJ/TSTG

-55~150

°C

Note :

A.

The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B.

Repetitive rating, pulse width limited by junction temperature.

C.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Units

Maximum Junction-to-Ambient

t

≤ 10s

RthJA

78

110

°C/W

Số phần tương tự - ACE12H016B

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