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2EDN752X bảng dữ liệu(PDF) 13 Page - Infineon Technologies AG

tên linh kiện 2EDN752X
Giải thích chi tiết về linh kiện  EiceDRIVER?
PDF  31 Pages
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nhà sản xuất  INFINEON [Infineon Technologies AG]
Trang chủ  http://www.infineon.com
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2EDN752X bảng dữ liệu(HTML) 13 Page - Infineon Technologies AG

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Data Sheet
13
Rev.2.5
2018-04-20
EiceDRIVER™
2EDN752x / 2EDN852x
Characteristics
5
Characteristics
The absolute maximum ratings are listed in Table 6. Stresses beyond these values may cause permanent damage
to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
5.1
Absolute Maximum Ratings
5.2
Thermal Characteristics
Table 6
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note or Test Condition
Min.
Typ.
Max.
Positive supply voltage
VVDD
-0.3
22
V
Voltage at pins INA, INB, ENA,
ENB
VIN
-10
22
V
Voltage at pins OUTA, OUTB
VOUT
-0.3
VVDD+0.3 V
Note1)
1) Voltage spikes resulting from reverse current peaks are allowed.
-2
VVDD+0.3 V
Repetitive pulse <200ns2)
2) Values are verified by characterization on bench.
Reverse current peak at pins
OUTA, OUTB
ISNKREV
ISRCREV
-5
5
Apk
< 500ns
Junction temperature
TJ
-40
150
°C
Storage temperature
TS
-55
150
°C
ESD capability
VESD
1.5
kV
Charged Device Mode
(CDM) 3)
3) According to JESD22-C101
ESD capability
VESD
2.5
kV
Human Body Model
(HBM) 4)
4) According to JESD22-A114
Table 7
Thermal Characteristics
Parameter
Symbol
Values
Unit
Note or Test Condition
Min.
Typ.
Max.
Thermal resistance junction-
ambient 1)
RthJA25
125
K/W
PG-DSO-8-60, Tamb=25°C
Thermal resistance junction-
case (top) 2)
RthJC25
66
K/W
PG-DSO-8-60, Tamb=25°C
Thermal resistance junction-
board 3)
RthJB25
62
K/W
PG-DSO-8-60, Tamb=25°C
Characterization parameter
junction-top 4)
Ψ
thJC25
16
K/W
PG-DSO-8-60, Tamb=25°C
Characterization parameter
junction-board 5)
Ψ
thJB25
55
K/W
PG-DSO-8-60, Tamb=25°C



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