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NTMFS006N12MC bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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NTMFS006N12MC bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() NTMFS006N12MC www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 120 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 A, ref to 25°C 32 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 120 V TJ = 25°C 1 mA TJ = 125°C 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 260 mA 2.0 4.0 V Threshold Temperature Coefficient VGS(TH)/TJ ID = 250 A, ref to 25°C −9.6 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 46 A 5.0 6.0 mW VGS = 6.0 V ID = 23 A 7.2 13 mW Forward Transconductance gFS VDS =15 V, ID = 46 A 130 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 60 V 3365 pF Output Capacitance COSS 1490 Reverse Transfer Capacitance CRSS 5.8 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 60 V; ID = 46 A 42 nC Threshold Gate Charge QG(TH) VGS = 6.0 V, VDS = 60 V; ID = 46 A 10.0 Gate−to−Source Charge QGS 16 Gate−to−Drain Charge QGD 6.3 Plateau Voltage VGP 5.0 V Total Gate Charge QG(TOT) 26 nC Output Charge QOSS VGS = 0 V, VDS = 60 V 122 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 60 V, ID = 46 A, RG = 2.5 W 19 ns Rise Time tr 5.6 Turn−Off Delay Time td(OFF) 28 Fall Time tf 5.7 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 46 A TJ = 25°C 0.86 1.2 V TJ = 125°C 0.76 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 300 A/ms, IS = 46 A 49 ns Charge Time ta 24 Discharge Time tb 25 Reverse Recovery Charge QRR 161 nC Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 1000 A/ms, IS = 46 A 44 ns Charge Time ta 27 Discharge Time tb 17 Reverse Recovery Charge QRR 475 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. |
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