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L6911E bảng dữ liệu(PDF) 8 Page - STMicroelectronics |
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L6911E bảng dữ liệu(HTML) 8 Page - STMicroelectronics |
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8 / 20 page ![]() L6911E 8/20 Figure 3. High Side driver peak current. Vboot-Vphase=12V (left) Vboot-Vphase=5V (right) CH1 = High Side Gate CH4 = Inductor Current Figure 4. Low Side driver peak current. Vcc=12V (left) Vcc=5V (right)CH1 = Low Side Gate CH4 = Inductor Current Monitor and Protection The output voltage is monitored by means of pin 1 (VSEN). If it is not within ±10% (typ.) of the programmed value, the powergood output is forced low. The device provides overvoltage protection, when the output voltage reaches a value 17% (typ.) greater than the nominal one. If the output voltage exceed this threshold, the OVP pin is forced high (5V) and the lower driver is turned on as long as the over-voltage is detected. The OVP pin is capable to deliver up to 60mA (min) in order to trigger an external SCR connected to burn the input fuse. The low-side mosfet turn-on implement this function when the SCR is not used and helps in keeping the ouput low. To perform the overcurrent protection the device compares the drop across the high side MOS, due to its RDSON, with the voltage across the external resistor (ROCS) connected between the OCSET pin and drain of the upper MOS. Thus the overcurrent threshold (IP) can be calculated with the following relationship: where the typical value of IOCS is 200µA. To calculate the ROCS value it must be considered the maximum RDSON (also the variation with temperature) and the minimum value of IOCS. To avoid undesirable trigger of overcurrent protection this relationship must be satisfied: I P I OCS R OCS ⋅ R DSON -------------------------------- = |
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