SWF3N80A datasheet(4/9 Pages) VBSEMI

tên linh kiện	SWF3N80A

Giải thích chi tiết về linh kiện	Power MOSFET

PDF	9 Pages

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nhà sản xuất	VBSEMI [VBsemi Electronics Co.,Ltd]

Trang chủ	www.VBsemi.com

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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

2400

2000

1600

1200

400

800

100

101

VDS, Drain-to-Source Voltage (V)

iss

rss

oss

GS = 0 V, f = 1 MHz

iss = Cgs + Cgd, Cds Shorted

rss = Cgd

oss = Cds + Cgd

91114_05

QG, Total Gate Charge (nC)

DS = 180 V

DS = 240 V

For test circuit

see figure 13

DS = 300 V

91114_06

D = 3.2 A

101

100

VSD, Source-to-Drain Voltage (V)

0.6

1.4

1.2

1.0

0.8

°C

150

°C

GS = 0 V

91114_07

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

C = 25 °C

J = 150 °C

Single Pulse

10-2

103

0.1

25 102

103

104

91114_08

102

SWF3N80A

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