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BAS16V bảng dữ liệu(PDF) 1 Page - Rectron Semiconductor |
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BAS16V bảng dữ liệu(HTML) 1 Page - Rectron Semiconductor |
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1 / 4 page ![]() SOT-23 Plastic-Encapsulate Switching Diode Maximum Ratings & Thermal Characteristics ( Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Reverse Voltage V R 75 Peak Repetitive Reverse Voltage V RRM 100 Power Dissipation Pd 225 Average Rectified Output Current IO 150 Non-Repetitive Peak Forward Surge Current @t==1us; TA=25 IFSM 2.0 Operating junction temperature Tj -55-+150 Storage temperature range Ts -55-+150 Thermal Resistance from Junction to Ambient R θJA 556 /W Notes:Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). Limits Symbols Parameter Test Condition Min Max Unit V(BR) Reverse Voltage IR=100uA 75 V IR Reverse Leakage Current VR=75V IF=1.0mA VF Forward Voltage IF=150mA --- 1.25 V IF= IR=10mA RL=100Ω TRR Reverse Recovery Time IRR=0.1 X IR --- 6 nS CT Capacitance VR=0V, f=1MHZ --- 2 pF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, resistive or inductive load. BAS16V FEATURES * Epoxy: Device has UL flammability classification 94V-O MECHANICAL DATA * Fast Switching Device (TRR <6.0 nS) * Power Dissipation of 225mW * High Stability and High Reliability * Low reverse leakage * SOT-23 Small Outline Plastic Package SOT-23 mW mA A V V 3 1 2 MARKING: A6 * P/N suffix V means AEC-Q101 qualified, eg:BAS16V * P/N suffix V means Halogen-free --- 1.0 uA --- 0.715 IF=10mA --- 0.855 IF=50mA --- 1.0 2020-11/08 REV:O |
Số phần tương tự - BAS16V |
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Mô tả tương tự - BAS16V |
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